The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1998
Filed:
Mar. 28, 1997
Applicant:
Inventors:
Hirofumi Fukui, Miyagi-ken, JP;
Chae Gee Sung, Miyagi-ken, JP;
Assignee:
Frontec Incorporated, Miyagi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438158 ; 438159 ;
Abstract
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulation film covering the gate electrode; forming an active semiconductor layer and an ohmic contact layer on the gate insulation film; forming a source/drain electrode made of Cr; and removing a portion of the ohmic contact layer except for the portion in contact with the source/drain electrode by an etching solution, wherein the step of removing the ohmic contact layer is conducted in a state of at least partially or entirely peeling a resist on the source/drain electrode made of Cr.