The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1998
Filed:
Jun. 27, 1996
John H Jerman, Palo Alto, CA (US);
IC Sensors, Inc., Milpitas, CA (US);
Abstract
A micromachined structure for handling fluids with an applied high voltage, i.e. for electrophoresis, includes a glass or other highly insulative substrate on which are formed very small diameter capillary channels of e.g. silicon nitride. Due to the absence of a silicon substrate, this structure is highly electrically insulative. The silicon nitride channels are formed by a micro-machining and etch process, so that they are initially defined in an etched sacrificial silicon wafer by conformal coating of etched features in the silicon wafer with a silicon nitride layer, which is then patterned to define the desired channels. The silicon wafer is bonded to the glass substrate and the bulk of the silicon wafer is sacrificially etched away, leaving the desired silicon nitride channels with supporting silicon mesas. The remaining silicon nitride 'shell' is bonded to the glass substrate and substantially duplicates the etched features in the original silicon wafer. The capillary channels are of a material such as low stress silicon nitride and there is no electrical shorting path to the highly insulative glass substrate.