The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1998
Filed:
Jul. 10, 1997
Hiroshi Ishihara, Tokyo, JP;
Eisuke Tokumitsu, Tokyo, JP;
Tokyo Institute of Technology, Tokyo, JP;
Abstract
The invention is directed to a writing method to effectively suppress inter-cell interference when writing data to a single transistor type ferroelectric memory. When V is a writing voltage, stripe-like conducting electrodes are row electrodes, and semiconductor stripes are column electrodes, then the writing method includes a first procedure and a successive second procedure based on V/3 rule. In the first procedure, when a voltage of +V is applied to the row electrode of the cell being observed, while a voltage of zero is applied to the column electrode, and voltages of +V/3 are applied to the other row electrodes, and voltages of +(2/3)V are applied to the other column electrodes, then in the second procedure, a voltage of zero is applied to the row electrode of the cell being observed, while a voltage of +V/3 is applied to the column electrode, and voltages of +V/3 are applied to the other row electrodes, and voltages of zero are applied to the other column electrodes. In the first procedure, when a voltage of -V is applied to the row electrode of the cell being observed, while a voltage of zero is applied to the column electrode, and voltages of -V/3 are applied to the other row electrodes, and voltages of -(2/3)/V are applied to the other column electrodes, then in the second procedure, a voltage of zero is applied to the row electrode of the cell being observed, while a voltage of -V/3 is applied to the column electrode, and voltages of -V/3 are applied to the other row electrodes, and voltages of zero are applied to the other column electrodes.