The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1998
Filed:
Dec. 10, 1996
Yong Gwan Kim, Bundang-ku, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A charge-coupled device includes a first P-type well formed in an N-type semiconductor substrate, a second P-type well formed repeatedly the first P-type well region, a charge-transfer region (BCCD) formed within the second P-type well region, an N-type photodiode region (PDN) formed in the upper portion of the first P-type well so as to be isolated from the charge-transfer region, a first high concentration P-type photodiode region (first PDP.sup.+ region) formed in the upper surface of the N-type photodiode region excluding the charge-transfer region and serving as a charge-isolating layer, first and second poly-gates formed repeatedly on the charge-transfer region, and a second high concentration self aligned P-type photodiode region (second PDP.sup.+ region) formed in the surface of the first high concentration P-type photodiode region. The charge-isolating region is thin to extend the potential pocket of each light-conversion PDN region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile