The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1998
Filed:
Mar. 01, 1996
Michio Arai, Tokyo, JP;
Kazushi Sugiura, Kanagawa, JP;
Ichiro Takayama, Kanagawa, JP;
Yukio Yamauchi, Kanagawa, JP;
Isamu Kobori, Chiba, JP;
Mitsufumi Codama, Kanagawa, JP;
Naoya Sakamoto, Kanagawa, JP;
TKD Corporation, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JP;
Abstract
A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a lateral length of the second gate electrode. Also, the first gate is electrically insulated from the active layer of semiconductor material by the first insulation layer so that the drain current saturates in a high drain voltage region.