The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1998
Filed:
Dec. 12, 1996
Applicant:
Inventors:
Hirofumi Hajime, Miyazaki, JP;
Toshiharu Yubitani, Miyazaki-gun, JP;
Assignee:
Komatsu Electronic Metals Co., Ltd., Hiratsuka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438691 ; 438692 ;
Abstract
method of manufacturing semiconductor wafers, which can prevent the pendent surface phenomenon during the mirror polishing of the wafers and can enhance the flatness of the mirror polished surfaces. The method of manufacturing semiconductor wafers according to this invention includes slicing ingots into wafers, chamfering the peripheral edge portions of the wafers, lapping the sliced surfaces of the wafers, grinding the lapped surfaces of the wafers to form a gradual concave shape, mirror polishing the ground surfaces of the wafers, and finally cleaning the mirror polished wafers.