The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1998
Filed:
Nov. 13, 1996
Applicant:
Inventors:
Shigekazu Izumi, Tokyo, JP;
Yutaka Uneme, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
438479 ; 117104 ;
Abstract
A method of doping a compound semiconductor layer n-type during epitaxial growth of the compound semiconductor layer includes supplying source materials including respective elements of a compound semiconductor material to a heated monocrystalline substrate, epitaxially growing a layer of the compound semiconductor material on the heated substrate and, simultaneously, supplying SiI.sub.4 as a dopant source material including silicon to the heated substrate, incorporating silicon as a dopant impurity producing n-type conductivity into the compound semiconductor layer during the epitaxial growth.