The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1998
Filed:
Sep. 27, 1996
Applicant:
Inventors:
Assignee:
Hyundai Electronics Industries, Co., Ltd., Ichon-shi, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430311 ; 430394 ; 2504922 ;
Abstract
A method for forming micro patterns of a semiconductor device which uses a dipole illumination aperture adapted to transmit the spatial frequency components of light only in the X-axis direction and a dipole illumination aperture adapted to transmit the spatial frequency components of light only in the Y-axis direction, thereby obtaining the same effect as in the case using two sheets of masks to provide an increase in process margin.
Kim, Hyeong. (1998). Method for forming micro patterns of semiconductor devices (U.S. Patent No. 5821034). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5821034
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile