The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1998
Filed:
May. 08, 1996
Applicant:
Inventors:
Tae Song Kim, Seoul, KR;
Joon Han Kim, Seoul, KR;
Dong Heon Lee, Seoul, KR;
Jeon-Kook Lee, Seoul, KR;
Hyung Jin Jung, Seoul, KR;
Assignee:
Korea Institute of Science and Technology, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427561 ; 427596 ; 427597 ; 4272553 ; 427 79 ; 4271263 ; 427226 ; 427240 ; 427299 ; 20419218 ; 20419226 ; 2041922 ;
Abstract
A PZT ferroelectric thin film is sputter deposited on an electrode without microcracks while avoiding oxygen and Pb ion deficiencies at the electrode interface by initially forming a buffer layer containing a sufficient amount of a volatile Pb component and a sufficient amount of oxygen to easily absorb the energy of sputter particles. The PZT ferroelectric thin film can also be deposited by laser ablation.