The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1998
Filed:
Mar. 03, 1997
Yuko Maruyama, Tenri, JP;
Yuzuru Kanemori, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
First and second gate insulating films, a semiconductor layer made of a-Si(i), and an etching stopper layer are formed to cover a gate electrode on a glass substrate. A drain electrode side contact layer and a source electrode side contact layer are made out of a-Si(n.sup.+) in such a manner to be cut off on the etching stopper layer. A disconnection preventing a-Si(n.sup.+) wire is formed below a source wire in its longitudinal direction, and atop of which a pixel electrode is formed. Since the disconnection preventing a-Si(n.sup.+) wire and source electrode side contact layer are spaced apart, static-induced characteristics deterioration of TFT and the point and line defects during the substrate fabrication sequence can be eliminated and the non-defective ratio of the display device can be improved drastically.