The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 1998

Filed:

Apr. 11, 1991
Applicant:
Inventors:

Dong-Seon Min, Seoul, KR;

Dong-Soo Jeon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F / ;
U.S. Cl.
CPC ...
323314 ; 327538 ;
Abstract

A reference voltage generating circuit of a semiconductor memory device including a reference voltage circuit for producing a constant voltage, a differential amplifier for receiving the constant voltage as one input, a MOS transistor with the gate connected to the output of the differential amplifier and with the channel connected between a power supply terminal and a reference voltage output terminal and a voltage divider with an input and output respectively connected to the reference voltage output terminal and the other input of the differential amplifier, is disclosed. The voltage divider has a MOS transistor connected between the reference voltage output terminal and the output and a resistor connected between the output and ground voltage terminal, the MOS transistor being operated in saturation region. The voltage of the reference voltage output terminal is proportional to the constant voltage and inversely proportional to the resistance of the load means, to thereby keep a stable voltage regardless of the variation of the temperature and in manufacturing.


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