The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1998
Filed:
Nov. 13, 1996
Applicant:
Inventor:
Hyeok Jae Yee, Seoul, KR;
Assignee:
LG Semicon, Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257355 ;
Abstract
An electrostatic-discharge (ESD) protecting circuit of a semiconductor device prevents damage from an ESD applied to an internal circuit through an input or output pad. The thickness of respective gate insulating layers of respective active devices of the electrostatic-discharge protecting circuit and internal circuit, which are formed within a given radius in the range of about 350.mu.m to about 1000.mu.m from the electrostatic-discharge protecting circuit, is thicker than the thickness of gate insulating layers of active devices formed outside the radius.