The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1998
Filed:
Nov. 05, 1997
Sa Kyun Rha, Seoul, KR;
Young Il Cheon, Seoul, KR;
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Abstract
This invention relates to thin film transistors having a sloped drain region suitable for high integrated elements and the method for fabricating the same. The thin film transistor comprising a substrate, a gate pole formed on the central part of the substrate, a semiconductor layer formed to surround the gate pole on the substrate, a side wall spacer formed at one side of the gate pole on the semiconductor layer, and high density impurity regions formed in the semiconductor layer on both sides of the gate pole. The method for fabricating a TFT comprising steps for forming a gate pole on the central part of a substrate, forming a gate insulation film and a semiconductor layer successively on all over the surface of the substrate, forming a side wall spacer only at one side of the gate pole on the semiconductor layer, and forming high density impurity regions in the semiconductor layer on both sides of the gate by ion injecting impurity ions into the semiconductor layer.