The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1998
Filed:
Jun. 03, 1997
Applicant:
Inventors:
Martin Kerber, Munchen, DE;
Udo Schwalke, Heldenstein, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438587 ;
Abstract
The MOS transistor has field plates and a subarea of the gate formed from the same polysilicon layer. A gate oxide lying underneath them is produced at the beginning of the fabrication process and it therefore exhibits particularly high quality. The polysilicon in the active area is raised to the same level as the adjoining field oxide areas, resulting in a planar topology.