The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1998
Filed:
Jun. 28, 1996
Applicant:
Inventors:
Michael D Church, Sebastian, FL (US);
Akira Ito, Palm Bay, FL (US);
Assignee:
Harris Corporation, Melbourne, FL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438307 ; 438529 ;
Abstract
The double lightly diffused transistor has drain regions with a lightly doped arsenic region 42 entirely contained within a lightly doped phosphorus region 40. The arsenic region is implanted with a dose less than 1.times.10.sup.15 ions/cm.sup.2 and is preferably implanted with a dose of about 3.times.10.sup.3 to 2.times.10.sup.14 ions/cm.sup.2. The drains are silicided for ohmic contact.
Church, Michael. (1998). Double diffused mos device and method (U.S. Patent No. 5817564). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5817564
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