The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1998
Filed:
Sep. 04, 1997
Hiroaki Kotaka, Hadano, JP;
Hidenori Yamaoka, Odawara, JP;
Shuitsu Matsuo, Atsugi, JP;
Masahiro Ando, Hadano, JP;
Mikiya Fujii, Narita, JP;
Hiroyuki Terada, Abiko, JP;
Yasuo Misu, Narita, JP;
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Toshiba Monofrax Co., Ltd., Tokyo, JP;
Abstract
Disclosed is a method of manufacturing aluminum nitride, which comprises the steps of preparing a mixed gas consisting essentially of an ammonia gas and at least 0.5% by volume of a hydrocarbon gas, calcining .gamma.-Al.sub.2 O.sub.3 or a precursor thereof at 300.degree. to 1,100.degree. C. so as to prepare the .gamma.-Al.sub.2 O.sub.3 having a moisture content of 1 weight % or less; heating the calcined .gamma.-Al.sub.2 O.sub.3 in the mixed gas at a temperature of 1,200.degree. to 1,700.degree. C., thereby preparing porous aluminum nitride having a specific surface area of 10 m.sup.2 /g or more; and heat-treating the porous aluminum nitride in an atmosphere of an ammonia gas, or a mixed gas of an ammonia gas and an inert gas, at 1600.degree. to 2000.degree. C., so as to make contents of both carbon and oxygen contained in the aluminum nitride 1 weight % or less.