The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Jun. 21, 1996
Applicant:
Inventor:
Yuji Furushima, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01S / ; H01S / ;
U.S. Cl.
CPC ...
372 45 ; 372 43 ; 257 94 ; 257 96 ;
Abstract
The present invention discloses a highly bright short wavelength light emitting semiconductor device with high reliance having improved crystallinity and surface smoothness. The device comprises at least one layer of In.sub.x Ga.sub.y Al.sub.1-x-y N (where, 0.ltoreq.x.ltoreq.1, 0.ltoreq.x+y.ltoreq.1) formed on a sapphire substrate or a Si substrate, wherein a ZnO buffer layer (2) which can lattice match In.sub.x Ga.sub.y Al.sub.1-x-y N is formed on the substrate (1) and a manufacturing method thereof.
Furushima, Yuji. (1998). Light emitting semiconductor device and its manufacturing method (U.S. Patent No. 5815520). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5815520
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile