The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Jan. 30, 1996
Yoshihiro Kumazaki, Chiyoda-ku, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
A field shield element for isolating semiconductor devices formed on a common substrate. The field shield element comprises an electrode of a high melting point metal which may have a reduced thickness and which avoids punch through of a connection point through the field shield electrode during manufacture. By employing the shield gate electrode metal having a high melting point, the reduction in thickness of the shield gate electrode provides a corresponding reduction in thickness of the offset existing between the semiconductor device and the isolation structure formed with the field shield element. The shield gate electrode may be combined with metal silicon compounds, and metal nitrides to realize the foregoing benefits of avoiding punchthrough and reducing the offset.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile