The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Oct. 25, 1995
Applicant:
Inventor:
Satoshi Saito, Hiroshima, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257379 ; 257359 ; 257364 ; 257368 ; 257380 ; 257903 ;
Abstract
A semiconductor device includes a pair of transistors each having an active region defined on a surface of a semiconductor substrate, a gate insulation film formed on the active region, a gate electrode formed on the gate insulation film, and a diffusion layer formed in the active region of the semiconductor substrate, one of the transistors having an opening formed by removing part of the gate insulation film on the active region, through which opening the diffusion layer is directly connected to the gate electrode of the other transistor, an end portion of the gate electrode intersecting the outer periphery of the opening at at least one point on the diffusion layer.