The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Feb. 24, 1997
Kenichi Furuta, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A semiconductor IC device which does not incur a decrease in the dielectric strength by a leakage current flowing over the surface of the semiconductor device, the IC device comprising: a semiconductor chip including a first function region, a second function region, and a third function region, wherein a current flowing through the third function region by an electric signal input to the first function region; and a first and a second pad provided on the surface of the semiconductor chip, and serving as electric connectors for the first and second function regions, wherein when there is no electric signal input to the first region, a depletion region is so formed as to surround the first and second function regions between the first and second function regions, and the third function region to improve the dielectric strength between the first and second function regions and the third function region, and wherein the first and second pads are so arranged as to be close to each other substantially in the center of the surface of the semiconductor chip.