The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Jul. 28, 1997
Applicant:
Inventor:
KeunHyung Park, Yungdungpo-ku, KR;
Assignee:
Goldstar Electron Company, Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257321 ; 257315 ; 257316 ;
Abstract
An EEPROM flash memory cell and a process for formation thereof are disclosed. The EEPROM flash memory cell includes: a source; a drain; a gate insulating layer disposed upon a channel between the source and the drain; a floating gate electrode disposed upon the gate insulating layer and facing toward the channel; and a control gate electrode disposed upon the floating gate electrode across an intermediate insulating layer; and further includes, an erasing electrode for contacting with at least one side of the floating gate electrode at least at one or more spots thereof across a tunneling insulating layer.