The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Sep. 09, 1996
Applicant:
Inventors:
David K Liu, Cupertino, CA (US);
Wenchi Ting, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257315 ; 257322 ; 257326 ;
Abstract
The present invention is directed toward a novel type of FLASH EEPROM cell that is highly scalable in size, easy to fabricate, reliable and capable of in-system programmability. The semiconductor memory cell comprises a lightly doped n- region including a channel region, a first insulating layer overlying portions of said n- region, and a floating gate overlying said first insulating layer. The cell further includes a second insulating layer overlying said floating gate and a control gate overlying second insulating layer.