The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
May. 15, 1997
Koji Ohtsuka, Kawagoe, JP;
Hitoshi Murofushi, Sagamihara, JP;
Emiko Chino, Kawagoe, JP;
Tetsuji Moku, Asaka, JP;
Sanken Electric Co., Ltd., Saitama-ken, JP;
Abstract
An LED is disclosed which has a laminated semiconductor body with an anode and a cathode formed on a pair of opposite faces thereof. Among the layers of the semiconductor body are an active layer of AlGaInP semiconductor material, an n type cladding layer of either n type AlGaInP or n type AlInP semiconductor material on one side of the active layer, and a p type cladding layer of p type AlGaInP or p type AlInP semiconductor material on another side of the active layer. Unlike the conventional belief that the active layer should be as free as possible from the infiltration of Zn used in the p type cladding layer as an impurity to determine its p conductivity type, and hence as high in crystallinity as possible, Zn is positively doped into the active layer with a concentration of 1.times.10.sup.16 -5.times.10.sup.17 cm.sup.-3.