The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Nov. 16, 1995
Naoki Makita, Nara, JP;
Tadayoshi Miyamoto, Tenri, JP;
Tsukasa Shibuya, Tenri, JP;
Masashi Maekawa, Vancouver, WA (US);
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The semiconductor device of invention includes: a substrate having an insulating surface; and an element region formed by crystallizing an amorphous silicon film, the element region being provided on the insulating surface of the substrate. In the semiconductor device, the element region is constituted by a laterally crystallized region formed by crystallizing the amorphous silicon film from a linearly crystallized region crystallized by a selective introduction of catalyst elements for promoting a crystallization of the amorphous silicon film to a region surrounding the linearly crystallized region by performing a heat-treatment, and a concentration of the catalyst elements in at least one of the laterally crystallized region and the linearly crystallized region is controlled by a line width of an introduction setting region having a linear planar pattern, the line width being set so as to selectively introduce the catalyst elements.