The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Nov. 19, 1996
Chan-sik Park, Kyungki-do, KR;
Kyung-hwan Cho, Kyungki-do, KR;
Sung-han Lee, Kyungki-do, KR;
Jae-kyung Lee, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A method for forming an integrated circuit isolation layer includes the steps of forming a patterned masking layer of a semiconductor substrate, forming an oxygen diffusing layer on the patterned masking layer and the exposed portion of the semiconductor substrate, and forming an isolation layer on the exposed portion of the substrate. In particular, the oxygen diffusing layer can be a layer of SiON, and the oxygen diffusing layer can have a thickness in the range of 30 .ANG. to 150 .ANG.. The oxygen diffusing layer and the mask layer can then be removed completing the isolation layer.