The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Nov. 01, 1996
Willy Hermansson, Vaster.ang.s, SE;
ABB Research Ltd., Zurich, CH;
Abstract
A method for producing a bipolar semiconductor device having a first layer doped according to a first doping type, the first layer being adapted to have minority charge carriers injected thereinto from a second layer of the device of a doping type opposite to that of the first layer in a forward conducting state of the device, comprises the steps of a) epitaxially growing the first layer and b) providing at least one region of the first layer with the minority charge carriers having a lifetime lower than in other parts of the first layer, the lower lifetime region of the first layer being formed directly during the epitaxial growth of this region by changing composition of substances fed to the first layer for the growth thereof when the region is grown.