The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Mar. 04, 1997
Kenneth M Seddon, Gilbert, AZ (US);
Gregory W Grynkewich, Gilbert, AZ (US);
Vida Ilderem, Phoenix, AZ (US);
Heidi L Denton, Scottsdale, AZ (US);
Jeffrey Pearse, Chandler, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
Portions of a semiconductor device (10,30) are formed from a dielectric layer (16,38,46) which is deposited using a plasma enhanced chemical vapor deposition (PECVD) process which adds trimethylphosphite as a dopant source during the deposition. A first embodiment forms sidewall spacers (17) adjacent to a gate structure (14) and forms doped regions (19) under the sidewall spacers (17) by annealing the dielectric layer (16) and driving phosphorus into a substrate (11). A second embodiment uses the trimethylphosphite doped film as an interlevel dielectric layer (38) which can be planarized to provide a flat surface for the formation of metal interconnect lines. A third embodiment of the present invention uses the trimethylphosphite doped film as a passivation layer (46) which is deposited in a single step process and has a phosphorus concentration to getter mobile ions.