The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Nov. 21, 1996
Applicant:
Inventors:
Katsuhiko Tomita, Miyanohigashi-machi, JP;
Tsuyoshi Nakanishi, Miyanohigashi-machi, JP;
Syuji Takamatsu, Miyanohigashi-machi, JP;
Satoshi Nomura, Miyanohigashi-machi, JP;
Hiroki Tanabe, Miyanohigashi-machi, JP;
Assignee:
Horiba, Ltd, Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
422 8201 ; 422 8202 ; 422 8203 ; 422 8204 ;
Abstract
A pH sensor having an ISFET is provided on a crystalline substrate of silicon with a thin film of aluminum oxide formed to have epitaxial growth with an overlaying thin film of silicon epitaxial grown on the aluminum oxide layer. A source element and a drain element are provided on the silicon film, and a pH responsive film layer is connected to the source and drain. The pH sensor can be accompanied with appropriate circuitry also integrally formed on the same epitaxial SOI substrate.