The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Jul. 19, 1996
Applicant:
Inventors:
Yawara Kaneko, Fuchu, JP;
Norihide Yamada, Kokubunji, JP;
Assignee:
Hewlett-Packard Company, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
216 63 ; 216 37 ; 216 74 ; 216 77 ; 438694 ; 438715 ; 438717 ;
Abstract
A gas-phase etchant is provided. The gas-phase etchant includes at least one halogen in gaseous form and/or at least one halogen halide in gaseous form. A Group III-nitride crystal is heated to a temperature in the range of 500.degree.-900.degree. C. and is etched in a flow of the gas-phase etchant. The gas-phase etchant may additionally include hydrogen. The gas-phase etchant may alternatively be diluted with inert gas, and the Group III-nitride crystal may be etched in a flow of the gas-phase etchant diluted with the inert gas.