The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 1998

Filed:

Jun. 26, 1996
Applicant:
Inventors:

Ramiro Solis, San Antonio, TX (US);

Mark Arnold Levan, San Antonio, TX (US);

Assignee:

VLSI Technology, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25F / ;
U.S. Cl.
CPC ...
134-1 ; 134-11 ; 134-2 ; 134-3 ;
Abstract

A method for enhancing sidewall polymer removal. In one embodiment of the present invention, O.sub.2 is introduced into an ashing environment at a flow rate of approximately 800 standard cubic centimeters per minute (SCCM). In the present embodiment, CF.sub.4 is also introduced into the ashing environment. The CF.sub.4 is introduced at a flow rate of approximately 80 SCCM. The ashing environment also has H.sub.2 O vapor introduced therein. In the present embodiment, the H.sub.2 O vapor is introduced into the ashing environment at a flow rate of approximately 80 SCCM. The ashing environment is used to selectively etch sidewall polymer material, thereby providing a method for removing sidewall polymer material without detrimentally etching other materials.


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