The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Jun. 16, 1995
Marcel F Schemmann, Eindhoven, NL;
Carolus J Van Der Poel, Eindhoven, NL;
Gerard A Acket, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A radiation-emitting semiconductor diode, especially a laser having a first and a second cladding layer, an active layer and a mesa which comprises at least the second cladding layer and which lies recessed in a third cladding layer. The second cladding layer comprises a first sub-layer which adjoins the active layer and is comparatively thin, and a second sub-layer which adjoins the first sub-layer and is comparatively thick, while the refractive index of the first sub-layer is lower than that of the second sub-layer. Confinement in the thickness direction of charge carriers and radiation is good in such a diode, while the third cladding layer has a relatively high refractive index (giving a relatively low bandgap). Thus, the third cladding layer has a relatively low aluminium content, while providing good lateral confinement.