The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Sep. 09, 1997
Kenshiro Arase, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
A semiconductor nonvolatile memory device enabling high speed, high precision data programming and have a large disturb margin, that is, a NAND type flash memory wherein the programming operation is performed by repeating a programming operation a plurality of times through a verify read operation, where the programming word line voltages VPP1 to VPPk and an intermediate prohibit voltage VM1 to Vmk are set to values which are incremented along with an increase of the number k of programming and where the voltage increments of the intermediate prohibit voltage for each increase of the number of programming is set to half of the voltage increments of the programming word line voltage for each increase of the number of programming. Due to this, high speed, high precision data programming becomes possible and further the degradation of the disturb margin can be eliminated.