The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Nov. 04, 1996
Applicant:
Inventors:
Guoliang Shou, Tokyo, JP;
Kazunori Motohashi, Tokyo, JP;
Makoto Yamamoto, Tokyo, JP;
Sunao Takatori, Tokyo, JP;
Assignee:
Yozan, Inc., Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257369 ; 257401 ;
Abstract
MOS inverter forming method within a large scale integrated circuit (LSI) for providing a pair of circuits with the same performance each of which comprise a plurality of MOS inverters serially connected from the first stage to the last stage, each the MOS inverters being provided with an input, characterized in that, the input of the MOS inverters of the first stage are adjacently positioned with facing to each other.