The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Dec. 29, 1997
Applicant:
Inventors:
Scott M Tyson, Albuquerque, NM (US);
Richard L Woodruff, Fort Collins, CO (US);
Assignee:
United Technologies Corporation, Hartford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257349 ; 257 57 ; 257 66 ; 257345 ; 257347 ;
Abstract
An H-transistor, fabricated in a silicon-on-insulator ('SOI') substrate, includes opposing source and drain terminals or regions flanking a centrally-located body node or well. Above the body node or well is formed the H-shaped gate terminal of the transistor. One or more shunt body contacts or ties bisect the source terminal and connect the source terminal of the transistor to the underlying body node. In this way, the body node or well is no longer electrically 'floating', but, instead, is connected to the fixed ground potential of the source terminal of the transistor.