The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Jul. 03, 1996
Yasunori Miura, Yokohama, JP;
Makoto Shibusawa, Kamakura, JP;
Atsushi Sugahara, Yokohama, JP;
Masahiro Seiki, Himeji, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a thin-film transistor 171, in order to sufficiently suppress an optical leakage current Ioff, thereby achieving a high ON/OFF current ratio, at least one of shortest distances between an arbitrary intersection of an outline of a gate electrode 131 and an outline of a drain electrode 141 and an intersection of the outline of the gate electrode 131 and an outline of a source electrode 151 is formed to be larger than the shortest distance between a portion of the outline of the gate electrode 131 overlapping the drain electrode 141 and another portion thereof overlapping the source electrode 151.