The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Jul. 03, 1997
Applicant:
Inventors:
Jenn-Ming Kuo, Edison, NJ (US);
Yu-Chi Wang, Piscataway, NJ (US);
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257194 ;
Abstract
In a DH-PHEMT the channel layer comprises InGaAs, the donor layers comprise In.sub.y Ga.sub.1-y P(0.15.ltoreq.y.ltoreq.0.85), and each of the spacer layers comprises an In.sub.0.5-q (Al.sub.x Ga.sub.1-x).sub.0.5+q P outer spacer layer (0.2.ltoreq.x) and an Al.sub.r Ga.sub.1-r As (0.ltoreq.r.ltoreq.0.3) inner spacer layer. In another embodiment, a similar InAlGaP layer forms a Schottky barrier gate contact with a barrier height of at least 1.0 eV and hence low leakage current. The devices exhibit the capability for both low noise and high power operation at low supply voltages.