The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Jul. 16, 1997
Applicant:
Inventor:
Atsushi Yoshinaga, Chichibu, JP;
Assignee:
Showa Denko K.K., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257103 ; 257101 ; 257102 ; 257 86 ;
Abstract
An epitaxial wafer for a GaP light-emitting element comprising an n-type GaP buffer layer, n-type GaP layer, nitrogen-doped n-type GaP layer and p-type GaP layer grown sequentially on an n-type GaP single-crystal substrate, in which the sum concentration of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu in the nitrogen-doped n-type GaP layer does not exceed 1.times.10.sup.15 cm.sup.-3, and the sum concentration of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu in the buffer layer does not exceed 1.times.10.sup.16 cm.sup.-3. n-type and p-type electrodes are formed on the wafer which is then divided to form GaP light-emitting elements.