The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Feb. 28, 1996
Yasumasa Inomoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor optical device includes, a monolithically integrated electro-absorption type optical modulator and a light source. A striped light-absorbing layer is formed on an n-type InP substrate, an i-type InP burying layer is formed on both sides of the striped light-absorbing layer, and a p-type burying layer is formed so as to cover the light-absorbing layer and the i-type InP layer. The i-type InP layer underlying the burying layer reduces the capacitance of the pn junction between the burying layer and the n-type InP substrate remarkably to enable the high-speed modulating operation of the semiconductor electro-absorption type optical device. The semiconductor optical device is fabricated by; forming two masking stripes of silicon oxide on the surface of an n-type InP substrate, forming a double heterostructure layer consisting of an n-type InP cladding layer, a p-type InP cladding layer and a light-absorbing layer interposed between the n-type and the p-type InP cladding layer, removing the respective inner edge portions of the two masking stripes, and forming a burying layer consisting of an i-type InP layer and a p-type InP layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile