The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Oct. 18, 1995
Applicant:
Inventors:
Bruce Alphenaar, Cambridge, GB;
Zahid Ali Durrani, Cambridge, GB;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; G11C / ;
U.S. Cl.
CPC ...
257 25 ; 257-3 ; 257197 ; 257 17 ; 257295 ; 257421 ; 257422 ; 257296 ; 257-4 ;
Abstract
A memory device consists of an array of resonant tunnel diodes in the form of pillars which are formed by selective etching. Each pillar includes first and second barriers (B1, B2) disposed between terminal regions (T1, T2) and a conductive region (CR1) between the barriers. The diameter of the pillars is typically of the order of 20-50 nm and is sufficiently small that the device exhibits first and second relatively high and low stable resistive states in the absence of an applied voltage between the terminal regions. The device can be used as a non-volatile memory at room temperature.