The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1998
Filed:
Oct. 02, 1996
Yasushi Maruyama, Tokyo, JP;
Hideshi Abe, Kanagawa, JP;
Kazuya Yonemoto, Tokyo, JP;
Takahisa Ueno, Kanagawa, JP;
Junji Yamane, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity-type semiconductor region (24) are sequentially formed on a first conductivity-type semiconductor substrate (22). A pixel MOS transistor (29) comprising a source region (27), a drain region (28) and a gate portion (26) is formed on the first conductivity-type semiconductor region (24), and a second conductivity-type channel stopper region (41) for signal charges accumulated in the first conductivity-type semiconductor region (24) of the gate portion (26) is formed within the first conductivity-type semiconductor region (24) formed just below the drain region (28).