The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1998
Filed:
Nov. 12, 1996
Masayoshi Takemi, Tokyo, JP;
Tatsuya Kimura, Tokyo, JP;
Daisuke Suzuki, Tokyo, JP;
Tetsuo Shiba, Tokyo, JP;
Kimitaka Shibata, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a p type InP substrate with a (001) surface; a mesa structure formed by dry etching, extending along a <110> direction, including semiconductor layers, having (110) side surfaces, and a height H.sub.m ; and mesa burying layers including a p type InP burying layer on the (110) side surfaces and the (001) surface, the p type InP burying layer having a thickness D.sub.p, and an n type InP burying layer on the p type InP burying layer. An angle between a (111)B surface and (001) surface is .theta..sub.111, the growth rates on the (110) side surfaces and on the (001) surface are respectively R.sub.g (110) and R.sub.g (001), an angle .theta. is tan .theta.=R.sub.g (110)/R.sub.g (001) and the critical thickness D.sub.n of the n type InP burying layer on the (001) surface when the n type InP burying layer is not grown on the (111)B surface is ##EQU1## The n type InP burying layer has a thickness D.ltoreq.D.sub.n. The leakage current path width is narrowed and contact of the n type InP burying layer and an uppermost layer of the semiconductor layers is avoided. Consequently, a semiconductor device having reduced leakage current and superior device characteristics is obtained.