The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1998
Filed:
Mar. 27, 1997
Applicant:
Inventor:
Tetsuya Uchida, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
365156 ; 365174 ; 365180 ;
Abstract
A semiconductor static random access memory cell is implemented by four field effect transistors formed on a silicon layer over a buried silicon oxide layer and two resistors formed in an inter-level insulating structure; additional capacitors are formed under the buried silicon oxide layer, and are respectively connected to the gate electrodes of the field effect transistors serving as driving transistors of the memory cell so as to enhance the stability of the memory cell without increase the transistor size.