The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1998
Filed:
Jun. 21, 1996
Edward Hin Lee, San Jose, CA (US);
Randall George Simmons, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention is an integral magnetic head suspension and method for making the same. The integral suspension, with or without the head, contains integrated conductive circuits that have multiple cross overs for noise reduction. The suspension is fabricated completely on silicon (Si) wafers using semiconductor processes. A N+ silicon layer is disposed over a P- silicon wafer. The N+ silicon layer and the P- silicon wafer are thermally oxidized to generate a bottom silicon oxide layer opposite the N+ layer side of the wafer and a top silicon oxide layer on the N+ side of the wafer, and to drive the N+ silicon into the P- silicon wafer. A layer of polysilicon is disposed over the silicon oxide layer on top of the N+ silicon layer. One or more pairs of conductive traces having multiple cross-overs are fabricated on the layer of polysilicon. Optimally, a magnetic head is simultaneously fabricated on the suspension. The polysilicon layer is then patterned to define the head structure and suspension structure as one piece. Finally, the magnetic head and suspension are separated from the wafer by removing the first silicon oxide layer by a chemical etchant and the P- silicon wafer by selective etching. The head and suspension are released from the silicon wafer as a single structure using the above-described semiconductor processes. Accordingly, no grinding or cutting is used to define the dimensions of the head. Further, no processes are required to attach the head to the suspension and the suspension can be made from low mass materials such as silicon (Si) or Al.sub.2 O.sub.3.