The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1998
Filed:
Apr. 19, 1996
Seiji Ochi, Tokyo, JP;
Manabu Kato, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device includes forming a stripe-shaped first insulating film on a semiconductor layer; using the first insulating film as a mask, etching the semiconductor layer to a depth to form a stripe-shaped ridge including a portion of the semiconductor layer left under the first insulating film; using the first insulating film as a mask, growing, by MOCVD, a high-resistance layer, selected from InAlAs and InAsGaAs, contacting both sides of the ridge structure, the high-resistance layer having a shallow donor concentration N.sub.SD, a shallow acceptor concentration N.sub.SA, and a deep donor concentration N.sub.DD in relationships of N.sub.SA >N.sub.SD and N.sub.SA -N.sub.SD <N.sub.DD ; removing the first insulating film; forming a second insulating film covering the high-resistance layer; and forming a surface electrode on the semiconductor layer at the ridge structure.