The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1998
Filed:
Sep. 24, 1996
Applicant:
Inventor:
Yutaka Takizawa, Kanagawa, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438166 ; 438486 ; 148D / ; 257 65 ;
Abstract
A method for fabricating a thin film semiconductor device includes the steps of introducing, into an amorphous film of a semiconductor material, at least one metallic element that forms an intermetallic compound with the semiconductor material and at least one nonmetallic element selected from group VIa elements, group VIIa elements or nitrogen, and crystallizing the amorphous film, after introducing the metallic element and the nonmetallic element, by a thermal annealing process, to convert the amorphous film to a crystalline film.