The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1998
Filed:
Dec. 31, 1996
Applicant:
Inventors:
John H Tregilgas, Richardson, TX (US);
Thomas W Orent, Garland, TX (US);
Assignee:
Raytheon TI Systems, Inc., Lewisville, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 67 ; 438559 ; 438455 ; 438518 ;
Abstract
A P-type substrate for infrared photo diodes can be produced by the present invention. A CdZnTe substrate is utilized. A first layer of HgCdTe is formed by liquid phase epitaxy on the substrate. A CdTe passivation layer is formed over the HgCdTe. A ZnS layer is formed over the CdTe layer. A noble metal is introduced into either the CdTe or ZnS layers. During a subsequent baking of the composite, the noble metal diffuses throughout the composite and into the HgCdTe layer.