The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1998
Filed:
May. 31, 1995
Linda S Plano, Raleigh, NC (US);
Brian R Stoner, Chapel Hill, NC (US);
Kobe Steel USA Inc., Research Triangle Park, NC (US);
Abstract
A method of forming devices having textured and highly oriented diamond layers includes the steps of forming a plurality of diamond nucleation sites on a substrate and then growing diamond on the sites so merge and form a continuous diamond layer having {100} and {111} facets. The growing step is performed by repeatedly cycling between first growth parameters, which favor growth of the nucleation sites in a direction normal to the {100} facets relative to growth in a direction normal to the {111} facets, and second growth parameters, which favor growth of the {100} facets relative to growth of the {111} facets, in sequence. This is continued until a diamond layer of desired thickness is obtained having large and substantially coplanar {100} facets. The first growth parameters are selected so that the rate of growth of diamond in a direction normal to the exposed {100} facets of the layer is preferably between about one and one quarter (1.25) times and one and three quarter (1.75) times the rate of growth of diamond in a direction normal to the exposed {111} facets of the layer. The second growth parameters are also preferably selected so that the rate of growth of diamond in a direction normal to the exposed {100} facets is between about 0.9 and one and one half (1.5) times the rate of growth of diamond in a direction normal to the exposed {111} facets and more preferably, less than about 1.44 times that rate of growth. The method also includes the step of etching the diamond layer at intermediate stages of the growing step to remove defects therefrom. In particular, the etching step includes the step of etching the diamond layer between cycling from the first growth parameters to the second growth parameters. In accordance with these steps, a textured and highly oriented polycrystalline diamond layer can be achieved having a smooth surface, a high degree of registry between individual grains thereof and electrical properties approaching those of monocrystalline diamond.