The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1998
Filed:
Jun. 06, 1995
Yong Gwan Kim, Kyungki-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A D/A converter using a CCD for converting digital data to analog data, the CCD comprises a semiconductor having a first-conductivity type well. High-concentration charge source regions are positioned on predetermined portions of the semiconductor substrate in correspondence to the number of bits of the digital data. A plurality of barrier gates are formed on the charge source regions to respectively receive the bit signals of the digital data. Poly-gates are formed on the charge source regions having area that differ in correspondence to the bit signals of the digital data. A common output gate is formed on each of the poly-gates, and a high-concentration, second-conductivity type, floating diffusion area is formed on the output gate to collect charges accumulated in the poly-gates and to sense an overall amount of the charges. A reset gate and reset drain area are formed on the floating diffusion area for discharging the accumulated charges after the floating diffusion area senses the overall amount of the accumulated charges that corresponds to the analog data.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile