The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1998
Filed:
Feb. 22, 1996
Applicant:
Inventor:
Hidetake Nakamura, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
327434 ; 327437 ; 327427 ; 327389 ;
Abstract
A power MOSFET includes common source and drain terminals and a selection circuit. The sources and drains of a plurality of insulated gate field-effect transistors are respectively connected in parallel to the common source and drain terminals. The selection circuit selectively connects the gates of the insulated gate field-effect transistors to a gate terminal common to a source.