The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1998
Filed:
May. 20, 1997
Masayuki Mizuno, Tokyo, JP;
Masakazu Yamashina, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A plurality of MOS transistors connected to each other at a substrate electrode thereof to have a substrate potential are deviation-compensated by a combination of a power source having a power source potential independent from the substrate potential, a power supply line connected to a source electrode of each of the MOS transistors, a sample circuit composed of a sampled one of the MOS transistors, detection circuitry for detecting an action of the sample circuit to provide a detection signal representing a difference between the detected action of the sample circuit and a reference action therefor, and a voltage generator connected between the power source and the power supply line, the voltage generator generating a voltage depending on the detection signal.